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| PROCESS CP275 Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 105 x 105 MILS 8.5 MILS 32 x 19 MILS 28 x 22 MILS Al - 45,000A Ti/Ni/Ag - (300A, 1,000A, 10,000A) GEOMETRY GROSS DIE PER 4 INCH WAFER 980 PRINCIPAL DEVICE TYPES MJE13005 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28-March 2005) Central TM PROCESS CP275 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28-March 2005) |
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